Electrochemical investigation of the influence of thin SiOx films deposited on gold on charge transfer characteristics.

The paper reports on the study of the electrochem. behavior of a thin Au film electrode coated with SiO2 (SiOx) layers of increasing thickness. Stable thin films of amorphous SiO2 (SiOx) were deposited on glass slides coated with a 5. nm adhesion layer of Ti and 50 nm of Au, using plasma-enhanced CVD (PECVD) technique. Scanning electrochem. microscopy (SECM) and electrochem. impedance spectroscopy (EIS) were used to study the electrochem. behavior of the interfaces. In the case of SECM, the influence of the SiOx thicknesses on the electron transfer kinetics of 3 redox mediators was studied. Normalized current-distance curves (approach curves) were fitted to the theor. model to find the effective heterogeneous 1st order rate const. (k eff) at the sample. EIS was in addn. used to confirm the diffusion barrier character of the SiOx interlayer. [on SciFinder(R)]

Références

Titre
Electrochemical investigation of the influence of thin SiOx films deposited on gold on charge transfer characteristics.
Type de publication
Article de revue
Année de publication
2008
Revue
Electrochim. Acta
Volume
53
Pagination
7908–7914
ISSN
0013-4686
Soumis le 12 avril 2018