Electrical properties and non-volatile memory effect of the [Fe(HB(pz)3)2] spin crossover complex integrated in a microelectrode device

We report on the deposition of thin films of the Fe(HB(pz)3)2 (pz = pyrazolyl) mol. spin crossover complex by thermal evaporation By impedance measurements and Raman microspectroscopy, we show that the films maintain the structure and properties of the bulk material. The conductivity of the films decreases by ca. 2 orders of magnitude when the freshly deposited compound goes through a 1st (irreversible) thermal phase change ≳380 K. This property can be exploited as a nonvolatile (read-only) memory effect. (c) 2011 American Institute of Physics.

Références

Titre
Electrical properties and non-volatile memory effect of the [Fe(HB(pz)3)2] spin crossover complex integrated in a microelectrode device
Type de publication
Article de revue
Année de publication
2011
Revue
Appl. Phys. Lett.
Volume
99
Pagination
053307/1
ISSN
0003-6951
Soumis le 26 juin 2018