Electrical properties and non-volatile memory effect of the [Fe(HB(pz)3)2] spin crossover complex integrated in a microelectrode device
We report on the deposition of thin films of the Fe(HB(pz)3)2 (pz = pyrazolyl) mol. spin crossover complex by thermal evaporation By impedance measurements and Raman microspectroscopy, we show that the films maintain the structure and properties of the bulk material. The conductivity of the films decreases by ca. 2 orders of magnitude when the freshly deposited compound goes through a 1st (irreversible) thermal phase change ≳380 K. This property can be exploited as a nonvolatile (read-only) memory effect. (c) 2011 American Institute of Physics.
Références
- Titre
- Electrical properties and non-volatile memory effect of the [Fe(HB(pz)3)2] spin crossover complex integrated in a microelectrode device
- Type de publication
- Article de revue
- Année de publication
- 2011
- Auteurs
- Mahfoud, Tarik, Molnar Gabor, Cobo Saioa, Salmon Lionel, Thibault Christophe, Vieu Christophe, Demont Philippe, and Bousseksou Azzedine
- Revue
- Appl. Phys. Lett.
- Volume
- 99
- Pagination
- 053307/1
- ISSN
- 0003-6951
Soumis le 26 juin 2018